All Products

NTD4815N-35G

MOSFET NCH 30V 6.9A IPAK TRIMMED


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4815N-35G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 911
  • Description: MOSFET NCH 30V 6.9A IPAK TRIMMED (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 32.6W
Case Connection DRAIN
Turn On Delay Time 10.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 11.5V
Rise Time 21.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 87A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 60.5 mJ
Nominal Vgs 2.5 V
Height 2.38mm
Length 6.73mm
Width 7.49mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 35A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.26W Ta 32.6W Tc
Element Configuration Single
See Relate Datesheet