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  • NTD4815NT4G

NTD4815NT4G

MOSFET N-CH 30V 6.9A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4815NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 838
  • Description: MOSFET N-CH 30V 6.9A DPAK (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 35A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.26W Ta 32.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.92W
Case Connection DRAIN
Turn On Delay Time 10.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Rise Time 21.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.9A
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 87A
Avalanche Energy Rating (Eas) 60.5 mJ
Nominal Vgs 1.5 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet