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  • NTD4863NT4G

NTD4863NT4G

MOSFET N-CH 25V 9.2A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4863NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 585
  • Description: MOSFET N-CH 25V 9.2A DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.27W Ta 36.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.95W
Case Connection DRAIN
Turn On Delay Time 11.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 4.5V
Rise Time 16.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16.5 ns
Turn-Off Delay Time 20.2 ns
Continuous Drain Current (ID) 11.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.2A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 98A
Avalanche Energy Rating (Eas) 60.5 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet