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  • NTD4909N-35G

NTD4909N-35G

MOSFET N-CH 30V 41A SGL IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4909N-35G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 774
  • Description: MOSFET N-CH 30V 41A SGL IPAK (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.8A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 167A
Avalanche Energy Rating (Eas) 28 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1.37W Ta 29.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet