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NTD4909NT4G

MOSFET NFET DPAK 30V 41A 8.0 mOhm


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4909NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 125
  • Description: MOSFET NFET DPAK 30V 41A 8.0 mOhm (Kg)

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Details

Tags

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 12MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.37W Ta 29.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.37W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 12.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.8A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 28 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet