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  • NTD4963NT4G

NTD4963NT4G

NTD4963NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4963NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 223
  • Description: NTD4963NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Height 2.38mm
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Length 6.73mm
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Width 6.22mm
Published 2009
JESD-609 Code e3
Pbfree Code yes
Radiation Hardening No
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
REACH SVHC No SVHC
ECCN Code EAR99
RoHS Status RoHS Compliant
Resistance 9.6MOhm
Lead Free Lead Free
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.1W Ta 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35.7W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1035pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.1A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 16.2nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 8.1A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 33.8 mJ
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Nominal Vgs 2.5 V
See Relate Datesheet