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  • NTD4979N-35G

NTD4979N-35G

MOSFET N-CH 30V 9.4A IPAK TRIMME


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD4979N-35G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 682
  • Description: MOSFET N-CH 30V 9.4A IPAK TRIMME (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 1.38W Ta 26.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.56W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 13.3 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet