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NTD5865N-1G

MOSFET N-CH 60V 43A DPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD5865N-1G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 668
  • Description: MOSFET N-CH 60V 43A DPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 38A
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Gate to Source Voltage (Vgs) 20V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Breakdown Voltage 60V
Surface Mount NO
Avalanche Energy Rating (Eas) 36 mJ
Number of Pins 4
Transistor Element Material SILICON
Height 2.38mm
Operating Temperature -55°C~175°C TJ
Length 6.73mm
Packaging Tube
Published 2008
Width 6.22mm
Radiation Hardening No
JESD-609 Code e3
Pbfree Code yes
RoHS Status RoHS Compliant
Part Status Obsolete
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 18MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form THROUGH-HOLE
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 71W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1261pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
See Relate Datesheet