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NTD85N02R-1G

MOSFET N-CH 24V 12A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTD85N02R-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 229
  • Description: MOSFET N-CH 24V 12A IPAK (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 85A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.25W Ta 78.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Ta 85A Tc
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 5V
Rise Time 77ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 85A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 192A
Avalanche Energy Rating (Eas) 85 mJ
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
See Relate Datesheet