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  • NTDV20P06LT4G

NTDV20P06LT4G

NTDV20P06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTDV20P06LT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 737
  • Description: NTDV20P06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 150MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 65W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.5A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Rise Time 90ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 50A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet