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NTGS1135PT1G

MOSFET 8V Power Mosfet P-Channel


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTGS1135PT1G
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 237
  • Description: MOSFET 8V Power Mosfet P-Channel (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage -8V
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 970mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 6V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 16ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 3.9 ns
Turn-Off Delay Time 128 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.031Ohm
See Relate Datesheet