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NTHD4P02FT1G

MOSFET P-CH 20V 2.2A CHIPFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHD4P02FT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: -
  • Stock: 436
  • Description: MOSFET P-CH 20V 2.2A CHIPFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 130MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Tj
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 155m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Tj
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 13ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) -2.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 9A
FET Feature Schottky Diode (Isolated)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet