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NTHS2101PT1

MOSFET P-CH 8V 5.4A CHIPFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHS2101PT1
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 356
  • Description: MOSFET P-CH 8V 5.4A CHIPFET (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -8V
Pulsed Drain Current-Max (IDM) 7.5A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status OBSOLETE (Last Updated: 14 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -8V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -5.4A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V
Current - Continuous Drain (Id) @ 25°C 5.4A Tj
See Relate Datesheet