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  • NTHS4166NT1G

NTHS4166NT1G

MOSFET CHPFT SNGL 30V 8.2A NFET


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTHS4166NT1G
  • Package: 8-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 457
  • Description: MOSFET CHPFT SNGL 30V 8.2A NFET (Kg)

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Details

Tags

Parameters
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Factory Lead Time 2 Weeks
Power Dissipation 1.5W
Turn On Delay Time 12 ns
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
FET Type N-Channel
Mount Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 4.9A, 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.9A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Package / Case 8-SMD, Flat Lead
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Pins 8
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 20 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 6.6A
Gate to Source Voltage (Vgs) 20V
Operating Temperature -55°C~150°C TJ
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.022Ohm
Packaging Tape & Reel (TR)
Drain to Source Breakdown Voltage 30V
Height 1.1mm
Length 3.1mm
Published 2007
Width 1.7mm
RoHS Status ROHS3 Compliant
JESD-609 Code e3
Lead Free Lead Free
See Relate Datesheet