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NTJD4105CT2G

NTJD4105CT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTJD4105CT2G
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 920
  • Description: NTJD4105CT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 220mOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4105C
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C 630mA 775mA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 36 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 775mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.1A
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet