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NTLGF3402PT1G

MOSFET P-CH 20V 2.3A 6-DFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLGF3402PT1G
  • Package: 6-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 643
  • Description: MOSFET P-CH 20V 2.3A 6-DFN (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series FETKY™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -3.9A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code R-XDSO-C8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.14W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 22ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.14Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 11A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet