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  • NTLJF4156NT1G

NTLJF4156NT1G

NTLJF4156NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLJF4156NT1G
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 378
  • Description: NTLJF4156NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 4.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 427pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.5A Tj
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 9.2ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9.2 ns
Turn-Off Delay Time 14.2 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.5A
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
FET Feature Schottky Diode (Isolated)
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 18 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 4.6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 710mW Ta
Element Configuration Single
See Relate Datesheet