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NTLJS4114NT1G

NTLJS4114NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLJS4114NT1G
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 201
  • Description: NTLJS4114NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Case Connection DRAIN
Factory Lead Time 9 Weeks
Turn On Delay Time 5 ns
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
FET Type N-Channel
Mounting Type Surface Mount
Transistor Application SWITCHING
Package / Case 6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs 35m Ω @ 2A, 4.5V
Surface Mount YES
Vgs(th) (Max) @ Id 1V @ 250μA
Number of Pins 6
Transistor Element Material SILICON
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V
Operating Temperature -55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Packaging Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 9ns
Published 2005
Series µCool™
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
JESD-609 Code e3
Vgs (Max) ±12V
Pbfree Code yes
Part Status Active
Fall Time (Typ) 9 ns
Turn-Off Delay Time 20 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Continuous Drain Current (ID) 7.8A
Number of Terminations 6
Threshold Voltage 550mV
ECCN Code EAR99
Gate to Source Voltage (Vgs) 12V
Resistance 35MOhm
Drain to Source Breakdown Voltage 30V
Terminal Finish Tin (Sn)
Pulsed Drain Current-Max (IDM) 28A
Additional Feature LOGIC LEVEL COMPATIBLE
Nominal Vgs 550 mV
Subcategory FET General Purpose Power
Height 750μm
Length 2mm
Width 2mm
Technology MOSFET (Metal Oxide)
Radiation Hardening No
REACH SVHC No SVHC
Terminal Position DUAL
RoHS Status ROHS3 Compliant
Terminal Form C BEND
Lead Free Lead Free
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 700mW Ta
See Relate Datesheet