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  • NTLLD4901NFTWG

NTLLD4901NFTWG

ON SEMICONDUCTOR NTLLD4901NFTWG Dual MOSFET, Dual N Channel, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLLD4901NFTWG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 117
  • Description: ON SEMICONDUCTOR NTLLD4901NFTWG Dual MOSFET, Dual N Channel, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 17.4MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 810mW
Pin Count 8
Element Configuration Dual
Power Dissipation 3.23W
Power - Max 800mW 810mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 17.4m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 605pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.5A 6.3A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Continuous Drain Current (ID) 6.3A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.6A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet