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  • NTLUF4189NZTAG

NTLUF4189NZTAG

MOSFET N-CH 30V 1.2A 6UDFN


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTLUF4189NZTAG
  • Package: 6-UFDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 150
  • Description: MOSFET N-CH 30V 1.2A 6UDFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 1.2 ns
Turn-Off Delay Time 10.2 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.2A
Drain-source On Resistance-Max 0.2Ohm
DS Breakdown Voltage-Min 30V
FET Feature Schottky Diode (Isolated)
Height 500μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet