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  • NTMD4820NR2G

NTMD4820NR2G

Dual N-Channel 30 V 27 mOhm 7.7 nC 1.28 W Silicon SMT Mosfet - SOIC-8


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMD4820NR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 240
  • Description: Dual N-Channel 30 V 27 mOhm 7.7 nC 1.28 W Silicon SMT Mosfet - SOIC-8 (Kg)

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Details

Tags

Parameters
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.28W
Turn On Delay Time 9.4 ns
Power - Max 750mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 6.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 1.29W
Terminal Form GULL WING
Base Part Number NTMD4820N
Pin Count 8
Number of Elements 1
See Relate Datesheet