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  • NTMFS4108NT1G

NTMFS4108NT1G

NTMFS4108NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4108NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 723
  • Description: NTMFS4108NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Ta 96.2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.5A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 140 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 203A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet