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NTMFS4851NT1G

MOSFET N-CH 30V 9.5A SO-8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4851NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 923
  • Description: MOSFET N-CH 30V 9.5A SO-8FL (Kg)

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Details

Tags

Parameters
Factory Lead Time 34 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 870mW Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.16W
Case Connection DRAIN
Turn On Delay Time 14.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.5A Ta 66A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 39.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±16V
Fall Time (Typ) 5.2 ns
Turn-Off Delay Time 18.6 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0087Ohm
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet