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  • NTMFS4854NST3G

NTMFS4854NST3G

MOSFET N-CH 25V 15.2A SO-8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4854NST3G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 205
  • Description: MOSFET N-CH 25V 15.2A SO-8FL (Kg)

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Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 15.2A
Drain to Source Breakdown Voltage 25V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status CONSULT SALES OFFICE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series SENSEFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Number of Elements 1
Power Dissipation-Max 900mW Ta 86.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.31W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4830pF @ 12V
Current - Continuous Drain (Id) @ 25°C 15.2A Ta 149A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 11.5V
Rise Time 54ns
Drive Voltage (Max Rds On,Min Rds On) 3.2V 10V
Vgs (Max) ±16V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 24.4A
Gate to Source Voltage (Vgs) 16V
See Relate Datesheet