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  • NTMFS4927NT3G

NTMFS4927NT3G

MOSFET TRENCH 3.1 30V 9 Ohm NCH


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4927NT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 441
  • Description: MOSFET TRENCH 3.1 30V 9 Ohm NCH (Kg)

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Details

Tags

Parameters
Pbfree Code yes
Drain to Source Breakdown Voltage 30V
Part Status Active
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 920mW Ta 20.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20.8W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 913pF @ 15V
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Current - Continuous Drain (Id) @ 25°C 7.9A Ta 38A Tc
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Package / Case 8-PowerTDFN, 5 Leads
Rise Time 25.5ns
Surface Mount YES
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Pins 5
Transistor Element Material SILICON
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 38A
Packaging Tape & Reel (TR)
Published 2012
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Drain Current-Max (Abs) (ID) 7.9A
See Relate Datesheet