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NTMFS4941NT1G
Purchase
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For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
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(Please remember to check the spam folder if you didn't hear from us).
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are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The
basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and
country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Package / Case | DFN |
| Surface Mount | YES |
| Number of Pins | 5 |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 910mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 5 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.56W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11.6 ns |
| Transistor Application | SWITCHING |
| Rise Time | 22ns |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 47A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 1.65nF |
| Avalanche Energy Rating (Eas) | 42 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 9mOhm |
| Rds On Max | 6.2 mΩ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet