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NTMFS4982NFT3G

MOSFET FETKY SO8FL 30V 129A 1.3M


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4982NFT3G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 911
  • Description: MOSFET FETKY SO8FL 30V 129A 1.3M (Kg)

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Details

Tags

Parameters
Drain-source On Resistance-Max 0.0019Ohm
Operating Temperature -55°C~150°C TJ
DS Breakdown Voltage-Min 30V
Packaging Tape & Reel (TR)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Published 2014
Lead Free Lead Free
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 25A, 10V
Factory Lead Time 16 Weeks
Vgs(th) (Max) @ Id 2.2V @ 1mA
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 26.5A Ta 207A Tc
Package / Case 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drain to Source Voltage (Vdss) 30V
Surface Mount YES
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Pins 5
Vgs (Max) ±20V
Continuous Drain Current (ID) 207A
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 36A
See Relate Datesheet