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NTMFS4C029NT1G

Single N-Channel Power MOSFET 30 V, 46 A, 5.88mO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS4C029NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 102
  • Description: Single N-Channel Power MOSFET 30 V, 46 A, 5.88mO (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.49W Ta 23.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.88m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 987pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 8.2A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 132A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 31 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet