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  • NTMFS5834NLT1G

NTMFS5834NLT1G

MOSFET N-CH 40V 13A SO-8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS5834NLT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 555
  • Description: MOSFET N-CH 40V 13A SO-8FL (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 3.6W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1231pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 56.4ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 276A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 48 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet