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NTMFS5844NLT1G

MOSFET 60V NCH T2 SO8FL


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS5844NLT1G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 712
  • Description: MOSFET 60V NCH T2 SO8FL (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 243A
Avalanche Energy Rating (Eas) 48 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 3.7W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.2A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 11.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
See Relate Datesheet