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NTMFS5C430NT1G

NTMFS5C430NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMFS5C430NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 910
  • Description: NTMFS5C430NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 106W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Ta 185A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 185A
Drain-source On Resistance-Max 0.0017Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 338 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet