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NTMS4107NR2G

MOSFET N-CH 30V 11A 8-SOIC


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS4107NR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 597
  • Description: MOSFET N-CH 30V 11A 8-SOIC (Kg)

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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 15A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 930mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 16.7W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet