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  • NTMS4177PR2G

NTMS4177PR2G

NTMS4177PR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS4177PR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 562
  • Description: NTMS4177PR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) -8.9A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.6A
Drain to Source Breakdown Voltage -30V
Height 1.5mm
Length 5mm
Factory Lead Time 31 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Width 4mm
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Radiation Hardening No
Surface Mount YES
REACH SVHC No SVHC
Number of Pins 8
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Lead Free Lead Free
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 8
Number of Elements 1
Power Dissipation-Max 840mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 11.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 24V
Current - Continuous Drain (Id) @ 25°C 6.6A Ta
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
See Relate Datesheet