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  • NTMS4916NR2G

NTMS4916NR2G

MOSFET NFET SO8 30V 11.4A 9MOHM


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS4916NR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 494
  • Description: MOSFET NFET SO8 30V 11.4A 9MOHM (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Power Dissipation-Max 890mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1376pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 7.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15.6 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 11.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.4A
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet