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  • NTMS4N01R2G

NTMS4N01R2G

MOSFET N-CH 20V 3.3A 8-SOIC


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMS4N01R2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 238
  • Description: MOSFET N-CH 20V 3.3A 8-SOIC (Kg)

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Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 4.2A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 770mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Nominal Vgs 950 mV
Feedback Cap-Max (Crss) 100 pF
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet