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  • NTMSD3P102R2SG

NTMSD3P102R2SG

MOSFET P-CH 20V 2.34A 8-SOIC


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTMSD3P102R2SG
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 773
  • Description: MOSFET P-CH 20V 2.34A 8-SOIC (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 2.34A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.085Ohm
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 135 pF
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Packaging Tape & Reel (TR)
Published 2007
Series FETKY™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3.05A
Pin Count 8
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.34A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 42ns
See Relate Datesheet