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NTNS3190NZT5G

MOSFET N-CH 20V 0.224A XLLGA3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTNS3190NZT5G
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 784
  • Description: MOSFET N-CH 20V 0.224A XLLGA3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels 1
Power Dissipation-Max 120mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15.8pF @ 15V
Current - Continuous Drain (Id) @ 25°C 224mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 201 ns
Continuous Drain Current (ID) 224mA
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet