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NTP5404NRG

MOSFET N-CH 40V 136A TO220AB


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTP5404NRG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 347
  • Description: MOSFET N-CH 40V 136A TO220AB (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 5.4W Ta 254W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 32V
Current - Continuous Drain (Id) @ 25°C 24A Ta 167A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 85 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 136A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 258A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet