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NTP6411ANG

MOSFET NFET TO220 100V 72A 14MOH


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTP6411ANG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 364
  • Description: MOSFET NFET TO220 100V 72A 14MOH (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 14MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 217W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 217W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 144ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 157 ns
Turn-Off Delay Time 107 ns
Continuous Drain Current (ID) 72A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 77A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 285A
Avalanche Energy Rating (Eas) 470 mJ
Nominal Vgs 4 V
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet