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NTP75N03RG

MOSFET N-CH 25V 9.7A TO220AB


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTP75N03RG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 304
  • Description: MOSFET N-CH 25V 9.7A TO220AB (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.25W Ta 74.4W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 74.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 20V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 5V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 9.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 71.7 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet