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NTQS6463R2

SMALL SIGNAL P-CHANNEL MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-NTQS6463R2
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: PDF
  • Stock: 790
  • Description: SMALL SIGNAL P-CHANNEL MOSFET (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.02Ohm
DS Breakdown Voltage-Min 20V
RoHS Status Non-RoHS Compliant
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish TIN LEAD
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 930mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 6.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.8A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
See Relate Datesheet