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  • NTR2101PT1G

NTR2101PT1G

NTR2101PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTR2101PT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 789
  • Description: NTR2101PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 39MOhm
Subcategory Other Transistors
Voltage - Rated DC -8V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 960mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 7.4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1173pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 15.75ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 15.75 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -8V
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet