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NTR4170NT1G

MOSFET N-CH 30V 3.2A SOT23


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTR4170NT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 166
  • Description: MOSFET N-CH 30V 3.2A SOT23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 55MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 480mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 480mW
Turn On Delay Time 6.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 432pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.76nC @ 4.5V
Rise Time 9.9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 15.1 ns
Continuous Drain Current (ID) 2.4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1 V
Height 1.11mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet