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  • NTS2101PT1G

NTS2101PT1G

MOSFET P-CH 8V 1.4A SOT-323


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTS2101PT1G
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 172
  • Description: MOSFET P-CH 8V 1.4A SOT-323 (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 65MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -8V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 290mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 290mW
Turn On Delay Time 6.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 8V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 5V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 1.4A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -8V
Nominal Vgs -700 mV
Height 900μm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet