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  • NTTD4401FR2G

NTTD4401FR2G

MOSFET P-CH 20V 2.4A 8MICRO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTTD4401FR2G
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: PDF
  • Stock: 391
  • Description: MOSFET P-CH 20V 2.4A 8MICRO (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series FETKY™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3.3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 780mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.42W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) -10V
Drain Current-Max (Abs) (ID) 2.4A
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Feedback Cap-Max (Crss) 175 pF
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet