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NTTFS4821NTAG

NTTFS4821NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTTFS4821NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 604
  • Description: NTTFS4821NTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 55 mJ
Height 750μm
Length 3.15mm
Factory Lead Time 18 Weeks
Width 3.15mm
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mount Surface Mount
Radiation Hardening No
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Lead Free Lead Free
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 660mW Ta 38.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.1W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 11.5V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 18.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 57A
See Relate Datesheet