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  • NTTFS4939NTAG

NTTFS4939NTAG

Trans MOSFET N-CH 30V 14.3A 8-Pin WDFN EP T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTTFS4939NTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 305
  • Description: Trans MOSFET N-CH 30V 14.3A 8-Pin WDFN EP T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 8
JESD-30 Code S-XDSO-N5
Number of Elements 1
Power Dissipation-Max 850mW Ta 29.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.21W
Case Connection DRAIN
Turn On Delay Time 12.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1979pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta 52A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 20.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.9 ns
Turn-Off Delay Time 20.8 ns
Continuous Drain Current (ID) 14.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 52A
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet