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NTTFS5820NLTAG

MOSFET Single N-CH 60V 11A, 37A


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NTTFS5820NLTAG
  • Package: 8-PowerWDFN
  • Datasheet: PDF
  • Stock: 603
  • Description: MOSFET Single N-CH 60V 11A, 37A (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 11.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.7W Ta 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.5m Ω @ 8.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1462pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 37A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 800μm
Length 3.15mm
Width 3.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
See Relate Datesheet