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NUS5530MNR2G

NUS5530MNR2G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NUS5530MNR2G
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 432
  • Description: NUS5530MNR2G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Surface Mount YES
Number of Pins 8
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications General Purpose
Voltage - Rated 35V PNP 20V P-Channel
Subcategory Other Transistors
Current Rating (Amps) 2A PNP 3.9A P-Channel
Max Power Dissipation 2.5W
Peak Reflow Temperature (Cel) 260
Current Rating 3.9A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NUS5530MN
Pin Count 8
Number of Elements 1
Rise Time-Max 55ns
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 635mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN, P-Channel
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 2A
Continuous Drain Current (ID) -3.9A
Gate to Source Voltage (Vgs) -35V
Max Frequency 100MHz
Pulsed Drain Current-Max (IDM) 20A
Collector Emitter Saturation Voltage -100mV
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Collector Base Voltage (VCBO) -55V
Emitter Base Voltage (VEBO) -5V
DC Current Gain-Min (hFE) 100
Drain to Source Resistance 200Ohm
VCEsat-Max 0.3 V
Fall Time-Max (tf) 70ns
Height 950μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet