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  • NVB5405NT4G

NVB5405NT4G

Trans MOSFET N-CH 40V 16.5A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVB5405NT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: -
  • Stock: 432
  • Description: Trans MOSFET N-CH 40V 16.5A 3-Pin(2+Tab) D2PAK T/R (Kg)

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Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 32V
Current - Continuous Drain (Id) @ 25°C 16.5A Ta 116A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 116A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16.5A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 800 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet